Preparation and Structural Investigation of Ultra-Uniform Mo Films on a Si/SiO2 Wafer by the Direct-Current Magnetron Sputtering Method | Crystal Growth & Design
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MTI KOREA - Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm (부가세 별도)MTIKorea
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Micromachines | Free Full-Text | Short-Pulse Laser-Assisted Fabrication of a Si-SiO2 Microcooling Device
![a) As-fabricated TFSCs on the original Si/SiO2 wafer. (b) The TFSCs... | Download Scientific Diagram a) As-fabricated TFSCs on the original Si/SiO2 wafer. (b) The TFSCs... | Download Scientific Diagram](https://www.researchgate.net/publication/234020242/figure/fig1/AS:203104692772864@1425435340697/a-As-fabricated-TFSCs-on-the-original-Si-SiO2-wafer-b-The-TFSCs-are-peeled-off-from.png)
a) As-fabricated TFSCs on the original Si/SiO2 wafer. (b) The TFSCs... | Download Scientific Diagram
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